The IC plastic package: a simple method of predicting package performance

The IC plastic package: a simple method of predicting package performance

WORLD ABSTRACTS ON MICROELECTRONICS A prototype assembly facility for CerDip packaging. D. GOLDSTEIN. Solid St. Technol., August (1972), p. 33. Pro...

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WORLD

ABSTRACTS

ON MICROELECTRONICS

A prototype assembly facility for CerDip packaging. D. GOLDSTEIN. Solid St. Technol., August (1972), p. 33. Prototype integrated circuit assembly facilities are established for many purposes. However, they all have certain common objectives : to package a large variety of products in several package configurations in small quantity and to provide fast turnaround, good yield and high quality. The flexibility required of such a line can be achieved economically using CerDip technology. A typical prototype CerDip line which can be established for a capital investment of less than $50,000 is described. Equipment, space and manpower requirements for a typical line are discussed. W a f e r probe yield improvement. H. K. DICKEN. Microelectronics 4, No. 1 (1972), p. 43. Historically, the microelectronic industry has been accustomed to wafer probe yields in the range of 10-20 per cent. As viewed by management in other industries these numbers are unheard of and ridiculously low compared to the yields on chemical processing, equipment manufacturing and even agricultural products. In periods up through 1968 and 1969 the industry managed to survive with yields at these low levels.

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package. The ceramic package should be used wherever the reliability requirements necessitate its use and life cycle costs make it economical to the business.

MOS C-V techniques for IC process control. L. McMILLAN. Solid St. Technol., September (1972), p. 47. During IC wafer processing a wide range of variables produce a specific desired type of wafer. Often contaminants leak into, or are unknowingly introduced into, the processing procedure. The effect of these contaminants can readily be seen on a capacitance-voltage (C-V) plot such as is used in MOS wafer processing today. However, determining what caused the resultant variation in the C - V plot has been a problem that has plagued the process engineer. An equation of the C - V plot can be fommlated that includes the major physical parameter variables involved. This numerical model, which includes Fermi energy level, hole concentrations, etc., can be solved via the iterative method on a computer. The results can be printed out as individual C - V graphs for each set of initial equation parameters. These computer generated theoretical curves can then be matched against actual process C - V plots to determine the nature of contamination.

The IC plastic package: a simple method of predicting package performance. MARION C. HALLECK. l Oth IEEE Annual Proceedings, Reliability Physics (1972), A comparison of the strength of a l u m i n a substrates p. 88. Frequent changes in materials and construction for different separation techniques. D. H. SCHROEDER of the integrated circuit plastic packages have forced the and F. L. ENGLISH. IEEE Trans. Parts, Hybrids Packng consumers to continuous evaluation of their packages. Resistance to moisture is shown on recent plastic and ceramic dual-in-line integrated circuit packages from seven leading manufacturers. Results indicate that package material, barriers over the chip, passivation and backfill, added protection to the chip surface. U n d e r equivalent high moisture environmental conditions, the plastic package does not perform as well as the ceramic. Analysis of test data shows that plastic packages with no added moisture protection may be satisfactory in normal environmental applications. Package resistance to moisture at normal environmental conditions may be determined using overstressed tests and a modified Arrhenius plot.

PI-IP-8, No. 3, September (1972), p. 4. Carbon dioxide lasers are widely used to separate alumina sheet into individual substrates for hybrid microcircuits. Laser separation offers several advantages over other conventional techniques; however, the effects on the fiexural strength of the alumina have not previously been investigated. The fiexural strength of alumina substrates separated by COz, Q-switched YAG and pulsed YAG lasers and diamond sawing are compared. The Qswitched YAG laser technique produced substrates 45 per cent stronger than the CO2 and pulsed YAG laser techniques, and 13 per cent stronger than the diamond saw method.

A r e c o m m e n d a t i o n for c e r a m i c over plastic IC packages for 1972 real-time c o m m e r c i a l c o m puter systems. R. E. SUNDIUS. lOth IEEE Annual Proceedings, Reliability Physics (1972), p. 102. Reliability

Electromigration in gold--silver alloys. G. L. HOFMAN and A. G. GuY. J. Phys. Chem. Solids 33 (1972),

requirements for commercial, real-time computer systems are comparable today to many of the presentday military electronic systems. T o satisfy today's customer, it no longer is sufficient to build commercial computers to so-called "good commercial practices". Especially in real-time computer systems, the reliability design, testing programs and parts requirements need to be as stringent as present military programs. Because of the increase in commercial reliability requirements, ceramic vs. plastic packages for integrated circuits (ICs) will be discussed. The writer feels that the ceramic package is three times superior to the present plastic

p. 2167. Electromigration of gold and silver in goldsilver alloys was studied under isothermal conditions. An analysis was developed to determine the effective charges of the migrating gold and silver ions, employing inert markers and an electron-beam microprobe. The effective charge, q*, of both gold and silver was found to be independent of composition across the entire phase diagram at temperatures near 930°C. The effective charge of silver is equal to that of gold within the accuracy of the experiment; the average value is--9e. No temperature dependence of the average effective charge could be detected in a 50-50 at.% alloy in the temperature range 860-940°C. The current density employed in this investigation was about 104A/cm z.