Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

Accepted Manuscript Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming Xiao Wang, Zhihua Shen, Shengli Wu, Jintao Zhang PII: DOI: Reference:

S0038-1101(17)30172-7 http://dx.doi.org/10.1016/j.sse.2017.03.002 SSE 7201

To appear in:

Solid-State Electronics

Received Date: Revised Date: Accepted Date:

7 September 2016 19 December 2016 2 March 2017

Please cite this article as: Wang, X., Shen, Z., Wu, S., Zhang, J., Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming, Solid-State Electronics (2017), doi: http://dx.doi.org/10.1016/j.sse. 2017.03.002

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Highlights  Vacuum field-effect transistor (VFET) with a new structure is proposed.  The new VFET structure has a deep submicron vacuum channel.  The VFET was fabricated by surface conduction electron emitter fabrication process.  The deep submicron vacuum channel was achieved by using electro-forming process.  The fabricated device demonstrates a clear triode behavior of the gate modulation.

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