- Email: [email protected]
1973 International conference on solid state devices
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CALENDAR OF SOLID STATE EVENTS
The Conference is sponsored by the Electronic Materials Committee of AIME. The general subject will be: ‘preparation and Properties of Electronic Materials’. Among the specific topics to be emphasized according th preliminary plans, are materials for optoelectronic, magneto-optic, and acousto-optic applications, new methods for preparing insulating films,and contacts to electonic materials, The deadline for submitting 200—300 word abstracts of contributed papers is April 15, 1973. Papers presented wifi be considered for publication in the Journal of Electronic Materials. Information: Dr. Alan J. Strauss, MIT. Lincoln Laboratoty, P.O. Box 73, Lexington, Mass. 02173 U.S.A. 29—3 1 August 1973 1973 International Conference on Solid State Devices, Tokyo, Japan. The scope of the conference, sponsored by the Japan Society of Applied Physics, will include new devices, new phenomena and new materials, improved designs, and progress in device technologies. Registration fee for the 600 participants is $35 (U.S.) and includes the Technical Digest and Proceedings, to be published in March 1974. Participants interested in contributing a paper should submit five copies of a two-page summary ~“ English to: Professor Shoji Tanaka, Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan. Summaries must be submitted by March 31, 1973. Authors will be notified of their acceptance by May 15, 1973. A final paper in English of less than six pages will be required by July 31, 1973. Each author will be charged approximately $100 in addition to the registration fee for 200 reprints, Information: 1973 International Conference on Solid State Devices,
Vol. 12, No.6
The Japan Societh of Applied Physics, Kikai-Shinko Building, 3, Shiba-Koen, Minato-ku, Tokyo 105, Japan. 5—8 September 1973 International Conference on Magnetic Structures in Superconductors, Argonne National Laboratory. An International Conference on Magnetic Structures in Superconductors will be held at Argonne National Laboratory, Argonne, Illinois, on 5—8 September 1973. The Conference is sponsored by Argonne National Laboratory and the American Physical Society (Division of Solid State Physcis). The subject of the Conference will be fluxoids, flux-tubes, and normal domains in type-I and type-I! superconductors, including experiments and theory relating to their internal structure, interaction, and dynamics. Topics for papers will include vortex structure, the attractive vortex interaction, time-dependent phenomena, flux flow, noise, mixed-state structure, thin film type-I superconductors, Landau domain structure, and the current-induced intermediate state. Other subjects such as materials, flux pinning, and transport properties that do not bear directly upon the basic physics of magnetic structure will be deemphasized. -
The program will include both invited and contributed papers. The total number of papers will be limited to avoid parallel sessions and to allow adequate discussion between papers. Assisting in the preparation of the program is an international advisory panel consisting of M. Cyrot, U. Essmann, D. E. Farrell, J. Friedel, D. K. Finnemore, J. W. Garland, D. M. Ginsberg, K. E. Gray, C. Heiden, A. E. Jabobs, Y. B. Kim, H. Kirchner, K. Maki, J. G. Park, R. D. Parks, L. Rinderer, A. C. Rose-Innes, M. Tinkham, and H. Ullmaier. Contributed papers (10 mm.), to be selected on the basis of three-page informal summaries submitted by authors, will be chosen to balance the program. Informal summaries must be received by Friday, 1 June 1973, by the Chairman of the Program Committee: John R. Clem, Department of Physics,
Vol. 12, No.6
CALENDAR OF SOLID STATE EVENTS
Iowa State University, Ames, Iowa 50010. Abstracts of papers accepted for oral presentation may not be more than 200 words in length and must conform to the current rules for direct photocoyp reproduction set by the Bulletin ofthe American Thysical Society. Abstracts must be received by Wednesday, 22 August 1973, by the Conference Chairman: Rudolf P. Huebener, Solid State Science Division, Argonne National Laboratory, Argonne, Illinois 60439. Abstract booklets will be available at the Conference. A summary of the Conference will be made available as an Argonne report containing the abstracts of all papers, the list of participants, and a summarizing atticle by the organizers. Inquiries about the Conference should be directed to the Conference Chairman. 16—20 September 1973 —
The International Conference on Silicon Carbide 1973, Miami Beach Florida, U.S.A.
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The intent of the Conference is to provide a timely and accurate assessment of the current state of SiC as a material of technological value because of its unique combination of electrical, mechanical, optical, thermal, chemical, and physical properties. Eight sessions are planned for the conference which is under the sponsorship of the Air Force Cambridge Research Laboratories, University of South Carolina, Carborundum Company, General Electric Company, Hughes Research Laboratories, and Westinghouse Electric Corporation, in Cooperation with the International Committee on Silicon Carbide. The sessions wifi cover the following topics: (A) crystal growth, (b) measurement, (C) properties and phenomena, (D) devices and fabrication techniques, and (E) a full day on non-electronic applications. Each session will have at least one invited speaker, who will be a world authority in his field. The major part of the session will be carefully selected contributed papers. Information: Professor J. W. Faust, Jr., College of Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
CALENDAR OF SOLID STATE EVENTS
The Conference is sponsored by the Electronic Materials Committee of AIME. The general subject will be: ‘preparation and Properties of Electronic Materials’. Among the specific topics to be emphasized according th preliminary plans, are materials for optoelectronic, magneto-optic, and acousto-optic applications, new methods for preparing insulating films,and contacts to electonic materials, The deadline for submitting 200—300 word abstracts of contributed papers is April 15, 1973. Papers presented wifi be considered for publication in the Journal of Electronic Materials. Information: Dr. Alan J. Strauss, MIT. Lincoln Laboratoty, P.O. Box 73, Lexington, Mass. 02173 U.S.A. 29—3 1 August 1973 1973 International Conference on Solid State Devices, Tokyo, Japan. The scope of the conference, sponsored by the Japan Society of Applied Physics, will include new devices, new phenomena and new materials, improved designs, and progress in device technologies. Registration fee for the 600 participants is $35 (U.S.) and includes the Technical Digest and Proceedings, to be published in March 1974. Participants interested in contributing a paper should submit five copies of a two-page summary ~“ English to: Professor Shoji Tanaka, Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan. Summaries must be submitted by March 31, 1973. Authors will be notified of their acceptance by May 15, 1973. A final paper in English of less than six pages will be required by July 31, 1973. Each author will be charged approximately $100 in addition to the registration fee for 200 reprints, Information: 1973 International Conference on Solid State Devices,
Vol. 12, No.6
The Japan Societh of Applied Physics, Kikai-Shinko Building, 3, Shiba-Koen, Minato-ku, Tokyo 105, Japan. 5—8 September 1973 International Conference on Magnetic Structures in Superconductors, Argonne National Laboratory. An International Conference on Magnetic Structures in Superconductors will be held at Argonne National Laboratory, Argonne, Illinois, on 5—8 September 1973. The Conference is sponsored by Argonne National Laboratory and the American Physical Society (Division of Solid State Physcis). The subject of the Conference will be fluxoids, flux-tubes, and normal domains in type-I and type-I! superconductors, including experiments and theory relating to their internal structure, interaction, and dynamics. Topics for papers will include vortex structure, the attractive vortex interaction, time-dependent phenomena, flux flow, noise, mixed-state structure, thin film type-I superconductors, Landau domain structure, and the current-induced intermediate state. Other subjects such as materials, flux pinning, and transport properties that do not bear directly upon the basic physics of magnetic structure will be deemphasized. -
The program will include both invited and contributed papers. The total number of papers will be limited to avoid parallel sessions and to allow adequate discussion between papers. Assisting in the preparation of the program is an international advisory panel consisting of M. Cyrot, U. Essmann, D. E. Farrell, J. Friedel, D. K. Finnemore, J. W. Garland, D. M. Ginsberg, K. E. Gray, C. Heiden, A. E. Jabobs, Y. B. Kim, H. Kirchner, K. Maki, J. G. Park, R. D. Parks, L. Rinderer, A. C. Rose-Innes, M. Tinkham, and H. Ullmaier. Contributed papers (10 mm.), to be selected on the basis of three-page informal summaries submitted by authors, will be chosen to balance the program. Informal summaries must be received by Friday, 1 June 1973, by the Chairman of the Program Committee: John R. Clem, Department of Physics,
Vol. 12, No.6
CALENDAR OF SOLID STATE EVENTS
Iowa State University, Ames, Iowa 50010. Abstracts of papers accepted for oral presentation may not be more than 200 words in length and must conform to the current rules for direct photocoyp reproduction set by the Bulletin ofthe American Thysical Society. Abstracts must be received by Wednesday, 22 August 1973, by the Conference Chairman: Rudolf P. Huebener, Solid State Science Division, Argonne National Laboratory, Argonne, Illinois 60439. Abstract booklets will be available at the Conference. A summary of the Conference will be made available as an Argonne report containing the abstracts of all papers, the list of participants, and a summarizing atticle by the organizers. Inquiries about the Conference should be directed to the Conference Chairman. 16—20 September 1973 —
The International Conference on Silicon Carbide 1973, Miami Beach Florida, U.S.A.
iii
The intent of the Conference is to provide a timely and accurate assessment of the current state of SiC as a material of technological value because of its unique combination of electrical, mechanical, optical, thermal, chemical, and physical properties. Eight sessions are planned for the conference which is under the sponsorship of the Air Force Cambridge Research Laboratories, University of South Carolina, Carborundum Company, General Electric Company, Hughes Research Laboratories, and Westinghouse Electric Corporation, in Cooperation with the International Committee on Silicon Carbide. The sessions wifi cover the following topics: (A) crystal growth, (b) measurement, (C) properties and phenomena, (D) devices and fabrication techniques, and (E) a full day on non-electronic applications. Each session will have at least one invited speaker, who will be a world authority in his field. The major part of the session will be carefully selected contributed papers. Information: Professor J. W. Faust, Jr., College of Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.