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Smart power devices
Microelectronic Engineering 19 (1992) 141-144 Elsevier
141
SMART POWER DEVICES J.
Tihanyi
Siemens A.G. Munich B a l a n s t r a B e 73, HL SIP PE, 8000 Munich 80,
Germany
Abstract "Smart Power" devices are defined in this paper as semiconductor power switches which protect themselves against shorted loads, over-temperature, and power line disturbances. They are fully compatible with novel microcontrollers and other integrated circuits. The application areas for these devices are primarily in automotive electronics (12 Volts and 24 Volts) and programmable industrial controllers. New approaches extend their usefulness to 110/220 Volt A.C. networks and "Smart Modules" for A.C. motor drivers. i. SMART POWER FOR AUTOMOTIVE APPLICATIONS The first breakthrough of "Smart Power" has been achieved in automotive electronics. All of today's subsystems in automobiles are microcomputer controlled. This has motivated manufacturers to develop compatible, mostly dedicated power switches. These devices are various combinations of DMOS FETs, CMOS logic, MOS and bipolar analog circuits, and high voltage devices. They operate in the extremely harsh internal environment of an automobile and consequently must be extremely reliable and rugged to perform their tasks. Figure 1 shows a typical "Smart Power" device (Smart Sipmos device BTS 410). This chip has been fabricated using a process incorporating a self-isolation technology. There are approaches utilizing junction and even dielectric isolation of various types. The main trend is the use of widespread VLSI fabrication methods and facilities in the production of "Smart Power" devices.
0167-9317/92/$05.00 © 1992 - Elsevier Science Publishers B.V. All fights reserved.
142
Fig.
J. Tihanyi
Smart power devices
i: Typical monolithic Smart Power high side switch automotive applications (Siemens BTS 410)
2. SMART
POWER
FOR A.C.
for
NETWORKS
There is a demand for self-protecting, microcontroller compat ible devices in high voltage A.C. network applications. The primary uses would be in dimmers, ballasts for electoluminescent lighting, and fuses for household appliances. The evolution in this field today, however is far behind that of automotive electronics. The first really useful devices of this kind are high input gain, optically driven triacs with a high degree of ruggedness and with breakdown voltaqes up to 1000 Volts.
3. SMART
DEVICES
FOR HIGH
POWER
The advent of IGBTs with excellent performance parameters and compatability with MOS driving circuits has opened the way for creating very high power switches with ratings up to 500 KW and "smart" properties. The first products are "Smart Modules" which are three phase A.C. bridges used in A.C. electromotors with chopped current control in the frequency range of 5 - 20 KHz. The required properties of such smart modules are essentially those of the existing smart switches used in the automotive industry. They can, however, only be realized with hybrid technology in contrast to the monolithic or chip-on-chip technology employed in the automotive devices.
J. Tihanyi / Smart power devices
143
~. R E F E R E N C E S K.G. R i s c h m S l l e r P r o c e e d i n g s of EPE M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp.
420
A. P r e u s s g e r , E. Glenz, K. Heift, W. S c h w e t l i c k , K. W i e s i n g e r , W.M. P r o c e e d i n g s of I S P S D 1991 B a l t i m o r e 22 - 24. Apr. 1991, pp. R. Z a m b r a n o P r o c e e d i n g s of E P E - M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp. R. G a b r i e l P r o c e e d i n g s of E P E - M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp
-427
K. Malek, Werner 195
- 197
175 - 178
179 - 182
A. N a k a g a w a P r o c e e d i n g s of ISP SD 1991 B a l t i m o r e 22 - 24. Apr. 1991,
pp.
16 - 21
R. Sawada, H. N a k s d a P r o c e e d i n g s of ISPSD 1991 B a l t i m o r e 22 - 24. Apr. 1991,
pp.
203
- 208
S. M u k h e r j e e , M. Kim, L. Tsou, S. Wong, J.C. Y o u n g T e c h n i c a l D i g e s t of IEDM 1991 W a s h i n g t o n DC 8 - ll. Dec. 1991, pp. 145 - 148
141
SMART POWER DEVICES J.
Tihanyi
Siemens A.G. Munich B a l a n s t r a B e 73, HL SIP PE, 8000 Munich 80,
Germany
Abstract "Smart Power" devices are defined in this paper as semiconductor power switches which protect themselves against shorted loads, over-temperature, and power line disturbances. They are fully compatible with novel microcontrollers and other integrated circuits. The application areas for these devices are primarily in automotive electronics (12 Volts and 24 Volts) and programmable industrial controllers. New approaches extend their usefulness to 110/220 Volt A.C. networks and "Smart Modules" for A.C. motor drivers. i. SMART POWER FOR AUTOMOTIVE APPLICATIONS The first breakthrough of "Smart Power" has been achieved in automotive electronics. All of today's subsystems in automobiles are microcomputer controlled. This has motivated manufacturers to develop compatible, mostly dedicated power switches. These devices are various combinations of DMOS FETs, CMOS logic, MOS and bipolar analog circuits, and high voltage devices. They operate in the extremely harsh internal environment of an automobile and consequently must be extremely reliable and rugged to perform their tasks. Figure 1 shows a typical "Smart Power" device (Smart Sipmos device BTS 410). This chip has been fabricated using a process incorporating a self-isolation technology. There are approaches utilizing junction and even dielectric isolation of various types. The main trend is the use of widespread VLSI fabrication methods and facilities in the production of "Smart Power" devices.
0167-9317/92/$05.00 © 1992 - Elsevier Science Publishers B.V. All fights reserved.
142
Fig.
J. Tihanyi
Smart power devices
i: Typical monolithic Smart Power high side switch automotive applications (Siemens BTS 410)
2. SMART
POWER
FOR A.C.
for
NETWORKS
There is a demand for self-protecting, microcontroller compat ible devices in high voltage A.C. network applications. The primary uses would be in dimmers, ballasts for electoluminescent lighting, and fuses for household appliances. The evolution in this field today, however is far behind that of automotive electronics. The first really useful devices of this kind are high input gain, optically driven triacs with a high degree of ruggedness and with breakdown voltaqes up to 1000 Volts.
3. SMART
DEVICES
FOR HIGH
POWER
The advent of IGBTs with excellent performance parameters and compatability with MOS driving circuits has opened the way for creating very high power switches with ratings up to 500 KW and "smart" properties. The first products are "Smart Modules" which are three phase A.C. bridges used in A.C. electromotors with chopped current control in the frequency range of 5 - 20 KHz. The required properties of such smart modules are essentially those of the existing smart switches used in the automotive industry. They can, however, only be realized with hybrid technology in contrast to the monolithic or chip-on-chip technology employed in the automotive devices.
J. Tihanyi / Smart power devices
143
~. R E F E R E N C E S K.G. R i s c h m S l l e r P r o c e e d i n g s of EPE M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp.
420
A. P r e u s s g e r , E. Glenz, K. Heift, W. S c h w e t l i c k , K. W i e s i n g e r , W.M. P r o c e e d i n g s of I S P S D 1991 B a l t i m o r e 22 - 24. Apr. 1991, pp. R. Z a m b r a n o P r o c e e d i n g s of E P E - M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp. R. G a b r i e l P r o c e e d i n g s of E P E - M A D E P 91 F i r e n z e . 2 - 6. Sept. 1991, pp
-427
K. Malek, Werner 195
- 197
175 - 178
179 - 182
A. N a k a g a w a P r o c e e d i n g s of ISP SD 1991 B a l t i m o r e 22 - 24. Apr. 1991,
pp.
16 - 21
R. Sawada, H. N a k s d a P r o c e e d i n g s of ISPSD 1991 B a l t i m o r e 22 - 24. Apr. 1991,
pp.
203
- 208
S. M u k h e r j e e , M. Kim, L. Tsou, S. Wong, J.C. Y o u n g T e c h n i c a l D i g e s t of IEDM 1991 W a s h i n g t o n DC 8 - ll. Dec. 1991, pp. 145 - 148