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The TTL circuits D120C and D140C
WORLD
ABSTRACTS
ON MICROELECTRONICS
nique based on the equivalent circuit concept is described in which constant-current pulses rather than the more conventional constant-voltage pulses are applied to the device. With this technique it is possible to measure the conductivity of both dielectric layers as they exist in the device. Experimental results are presented and compared with theory. S A M N O S t e c h n o l o g y . B. BAZlN. Solid State Electron. 15 (1972), p. 649. T h e S A M N O S technology permits to fabricate insulated field-effect transistor having a selfaligned gate, reduced capacitance and lower surface step height. A silicon nitride layer serves first as a diffusion mask, then as an oxidation barrier and ultimately as a gate dielectric.
An automated integrated circuit layout design program of a systematic chip u s i n g b u i l d i n g blocks. N. SUGIYAMA and M. HmANO. Trans.Inst. Electron. Commun. Engrs. Japan 55-C (1972), p. 25. (In Japanese.) M O S I C : an integrated circuit layout design program of a systematic chip using building blocks is described. This system can automatically draw the final mask pattern wherein the placement of function blocks and interconnections are simultaneously determined so as to minimize the chip area. In order to realize the optimum IC chip, the problem ends up in minimizing the n u m b e r of interconnection levels which are newly defined in areas occupied for interconnections. From the point of graph-theory a graph is generated by interconnectings function blocks and arrangement of blocks is determined such t h a t a longest path having graph is as small length as possible. In this paper, we suggest the orders of
IC monestables can be e c o n o m i c a l . J. P. BROWN. Electron. Engng, April (1972), p. 30. Oscillator circuits are generally hand-tailored, using discrete components. Some IC oscillator circuit designs exist that can offer tangible economical advantages, e.g. low cost and savings in development and assembly time; these find useful application where high accuracy is not demanded.
Automatically tuned filter uses IC o p e r a t i o n a l a m p l i f i e r s . G. J. DEBOO and R. C. I-IEDLUND. EDN/ EEE, February (1972), p. 38. Audio and instrumentation systems frequently employ bandpass filters to improve the signal-to-noise ratio. If the input-signal frequency varies over a wide range a3 it does with many types of vibrating transducers--the bandwidth of the filter usually must be large enough to avoid undue attenuation and phase shift at the frequency extremes. But a wide-
RELIABILITY
417
determining interconnection routes and guarantee the determination of interconnection.
Focus on CMOS. E. A. Tomumo. Electron. Des. 8 (1972), p. 54. C M O S (complementary metal-oxide semiconductor) has always been an IC technology to watch. It has very low power dissipation, very high noise immunity and good switching speeds. But higher costs have tended to restrict C M O S to military and aerospace applications. And the scarcity of alternate sources has discouraged widespread commercial and industrial usage. T h a t picture is changing now. Increased yields are helping to reduce unit costs, while a growing n u m b e r of IC manufacturers are developing at least a customC M O S capability. On the design level, C M O S is being considered more and more for applications once dominated by T T L or P M O S (p-channel MOS), as well as for applications that open up new areas for ICs. The combination of silicon nltride and a l u m i n u m anodizatlon for s e m i c o n d u c t o r device pauivation. C. J. DELL'OCA and M. L. BARRY. Solid State Electron. 15 (1972), p. 659. T h e combination of silicon nitride and barrier anodization of the aluminum interconnects serves as excellent passivation for bipolar silicon devices, even under conditions of massive ionic contamination at temperatures as high as 400°C. This combination removes the restriction that silicon nitride positively overlaps the edges of all contact cuts and thus results in savings in device area. In addition, the processing complexity is somewhat reduced in that the silicon nitride can be delineated by a self-aligning anodization technique.
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
The T T L c i r c u i t s D120C a n d D140C. D. ARMGARTH and G. POSDZIECH. Nachrichtentech. 22 (1972), p. 42. (In German.) T h e function of the two integrated circuits is briefly described. Some important electric parameters are calculated and are compared with those which were measured. T h e dependence of the electric parameters on the temperature is described in detail.
AND
SYSTEMS AND
EQUIPMENTS
band filter will be less effective in rejecting noise. One solution to this dilemma is to use a self-tuning filter that automatically adjusts its center frequency to track the signal frequency. This technique allows the use of a filter that has a bandwidth considerably less than the range of input signal frequencies. T h e circuit described tunes itself over a frequency range from 2 to 20 kHz. It requires no reference frequency other than the input signal, and there is no internal oscillator or synchronization circuitry. T h e frequency range can be extended in decade steps by capacitor switching. C o p l a m o s k e e p s n - c h 2 n f l e l s i n l i n e . P. RICHMAN and J. A. HAvre. Electronics, May (1972), p. 111. Oxideisolated M O S structure controls parasitic currents that plagued past n-channel devices.
Integrated arrays offer m a n y advantages in o.c.r. s y s t e m s . D. PORTER. Electron. Engng, March (1972), p. 35. With the growing use of optical characterrecognition systems, there is an increasing demand for small high-speed and reliable sensors. T h e combination of integrated photodiode arrays and M O S technology offers a n u m b e r of significant advantages, and these are discussed against the basic requirements for o.c.r,
ABSTRACTS
ON MICROELECTRONICS
nique based on the equivalent circuit concept is described in which constant-current pulses rather than the more conventional constant-voltage pulses are applied to the device. With this technique it is possible to measure the conductivity of both dielectric layers as they exist in the device. Experimental results are presented and compared with theory. S A M N O S t e c h n o l o g y . B. BAZlN. Solid State Electron. 15 (1972), p. 649. T h e S A M N O S technology permits to fabricate insulated field-effect transistor having a selfaligned gate, reduced capacitance and lower surface step height. A silicon nitride layer serves first as a diffusion mask, then as an oxidation barrier and ultimately as a gate dielectric.
An automated integrated circuit layout design program of a systematic chip u s i n g b u i l d i n g blocks. N. SUGIYAMA and M. HmANO. Trans.Inst. Electron. Commun. Engrs. Japan 55-C (1972), p. 25. (In Japanese.) M O S I C : an integrated circuit layout design program of a systematic chip using building blocks is described. This system can automatically draw the final mask pattern wherein the placement of function blocks and interconnections are simultaneously determined so as to minimize the chip area. In order to realize the optimum IC chip, the problem ends up in minimizing the n u m b e r of interconnection levels which are newly defined in areas occupied for interconnections. From the point of graph-theory a graph is generated by interconnectings function blocks and arrangement of blocks is determined such t h a t a longest path having graph is as small length as possible. In this paper, we suggest the orders of
IC monestables can be e c o n o m i c a l . J. P. BROWN. Electron. Engng, April (1972), p. 30. Oscillator circuits are generally hand-tailored, using discrete components. Some IC oscillator circuit designs exist that can offer tangible economical advantages, e.g. low cost and savings in development and assembly time; these find useful application where high accuracy is not demanded.
Automatically tuned filter uses IC o p e r a t i o n a l a m p l i f i e r s . G. J. DEBOO and R. C. I-IEDLUND. EDN/ EEE, February (1972), p. 38. Audio and instrumentation systems frequently employ bandpass filters to improve the signal-to-noise ratio. If the input-signal frequency varies over a wide range a3 it does with many types of vibrating transducers--the bandwidth of the filter usually must be large enough to avoid undue attenuation and phase shift at the frequency extremes. But a wide-
RELIABILITY
417
determining interconnection routes and guarantee the determination of interconnection.
Focus on CMOS. E. A. Tomumo. Electron. Des. 8 (1972), p. 54. C M O S (complementary metal-oxide semiconductor) has always been an IC technology to watch. It has very low power dissipation, very high noise immunity and good switching speeds. But higher costs have tended to restrict C M O S to military and aerospace applications. And the scarcity of alternate sources has discouraged widespread commercial and industrial usage. T h a t picture is changing now. Increased yields are helping to reduce unit costs, while a growing n u m b e r of IC manufacturers are developing at least a customC M O S capability. On the design level, C M O S is being considered more and more for applications once dominated by T T L or P M O S (p-channel MOS), as well as for applications that open up new areas for ICs. The combination of silicon nltride and a l u m i n u m anodizatlon for s e m i c o n d u c t o r device pauivation. C. J. DELL'OCA and M. L. BARRY. Solid State Electron. 15 (1972), p. 659. T h e combination of silicon nitride and barrier anodization of the aluminum interconnects serves as excellent passivation for bipolar silicon devices, even under conditions of massive ionic contamination at temperatures as high as 400°C. This combination removes the restriction that silicon nitride positively overlaps the edges of all contact cuts and thus results in savings in device area. In addition, the processing complexity is somewhat reduced in that the silicon nitride can be delineated by a self-aligning anodization technique.
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
The T T L c i r c u i t s D120C a n d D140C. D. ARMGARTH and G. POSDZIECH. Nachrichtentech. 22 (1972), p. 42. (In German.) T h e function of the two integrated circuits is briefly described. Some important electric parameters are calculated and are compared with those which were measured. T h e dependence of the electric parameters on the temperature is described in detail.
AND
SYSTEMS AND
EQUIPMENTS
band filter will be less effective in rejecting noise. One solution to this dilemma is to use a self-tuning filter that automatically adjusts its center frequency to track the signal frequency. This technique allows the use of a filter that has a bandwidth considerably less than the range of input signal frequencies. T h e circuit described tunes itself over a frequency range from 2 to 20 kHz. It requires no reference frequency other than the input signal, and there is no internal oscillator or synchronization circuitry. T h e frequency range can be extended in decade steps by capacitor switching. C o p l a m o s k e e p s n - c h 2 n f l e l s i n l i n e . P. RICHMAN and J. A. HAvre. Electronics, May (1972), p. 111. Oxideisolated M O S structure controls parasitic currents that plagued past n-channel devices.
Integrated arrays offer m a n y advantages in o.c.r. s y s t e m s . D. PORTER. Electron. Engng, March (1972), p. 35. With the growing use of optical characterrecognition systems, there is an increasing demand for small high-speed and reliable sensors. T h e combination of integrated photodiode arrays and M O S technology offers a n u m b e r of significant advantages, and these are discussed against the basic requirements for o.c.r,