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Use of capacitance techniques in the study of two-dimensional layers in silicon MOSFETs
A253 results for the capacitance without a magnetic field and in a non-quantizing magnetic field. We find that the one-dimensional diffusion model as discussed by Stern is adequate for the discussion of the latter cases, but does not describe the quantizing case. A description is given which may be a basis for deriving the density of states and the contribution of both the localized and extended states.
Surface Science 142 (1984) 339-340 North-Holland, Amsterdam
339
USE OF CAPACITANCE TECHNIQUES IN THE STUDY OF TWODIMENSIONAL LAYERS IN SILICON MOSFETs * R.K. GOODALL, R.J. HIGGINS and J.P. H A R R A N G Department of Physics, University of Oregon, Eugene, Oregon 97403, USA Received 5 September 1983; accepted for publication 9 September 1983
Surface Science 142 (1984) 341-356 North-Holland, Amsterdam
341
E L E C I ' R O N - P H O N O N INTERACTION A N D SCREENING EFFECTS IN QUASI-TWO-DIMENSIONAL ELECTRON SYSTEMS S. DAS SARMA Center for Theoretical Physics, University of Maryland, College Park, Maryland 20742, USA Received 1 July 1983; accepted for publication 30 August 1983 Aspects of electron-phonon interaction and screening effects in quasi-two-dimensional electron systems (e.g. inversion and accumulation layers; semiconductor heterostructures and superlattices) are reviewed with particular emphasis on recent developments. Theoretical and experimental results are compared where ever possible. Differences with the bulk three-dimensional systems are pointed out and prospects for future theoretical efforts are outlines.
Surface Science 142 (1984) 357-360 North-Holland, Amsterdam
357
INTERACTION BETWEEN ELECTRONIC AND P H O N O N RAMAN SCA'ITERING IN HOLE SPACE CHARGE LAYERS ON SILICON M. B A U M G A R T N E R and G. ABSTREITER Physik- Department, Technische Universiti~tMiinchen, D-8046 Garching, Fed. Rep. of Germany Received 10 July 1983; accepted for publication 5 September 1983 The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mec;hanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.
Surface Science 142 (1984) 339-340 North-Holland, Amsterdam
339
USE OF CAPACITANCE TECHNIQUES IN THE STUDY OF TWODIMENSIONAL LAYERS IN SILICON MOSFETs * R.K. GOODALL, R.J. HIGGINS and J.P. H A R R A N G Department of Physics, University of Oregon, Eugene, Oregon 97403, USA Received 5 September 1983; accepted for publication 9 September 1983
Surface Science 142 (1984) 341-356 North-Holland, Amsterdam
341
E L E C I ' R O N - P H O N O N INTERACTION A N D SCREENING EFFECTS IN QUASI-TWO-DIMENSIONAL ELECTRON SYSTEMS S. DAS SARMA Center for Theoretical Physics, University of Maryland, College Park, Maryland 20742, USA Received 1 July 1983; accepted for publication 30 August 1983 Aspects of electron-phonon interaction and screening effects in quasi-two-dimensional electron systems (e.g. inversion and accumulation layers; semiconductor heterostructures and superlattices) are reviewed with particular emphasis on recent developments. Theoretical and experimental results are compared where ever possible. Differences with the bulk three-dimensional systems are pointed out and prospects for future theoretical efforts are outlines.
Surface Science 142 (1984) 357-360 North-Holland, Amsterdam
357
INTERACTION BETWEEN ELECTRONIC AND P H O N O N RAMAN SCA'ITERING IN HOLE SPACE CHARGE LAYERS ON SILICON M. B A U M G A R T N E R and G. ABSTREITER Physik- Department, Technische Universiti~tMiinchen, D-8046 Garching, Fed. Rep. of Germany Received 10 July 1983; accepted for publication 5 September 1983 The interaction of quasi-continuous electronic excitations in hole space charge layers of Si with the optical phonons is investigated. The induced asymmetric broadening of the one-phonon line can be understood as a quantum mec;hanical interference of the continuum excitations with the discrete energy state. The lineschape is directly related to electron-phonon interaction matrix elements.